硅纳米线阵列的制备及光伏性能

Preparation and Photovoltaic Properties of Silicon Nanowire Arrays

在常温常压下,采用无电极金属催化化学腐蚀法在P型单晶硅片(100)基底上制备定向排列的硅纳米线阵列。研究了不同浓度硝酸银对纳米线阵列形貌、反射光谱性能的影响和具有电池雏形的硅纳米线阵列的光伏性能。结果表明:硝酸银浓度在0.02mol/L时为最佳配比;与普通绒面电池相比,硅纳米线阵列太阳能电池的光电转换性能明显优于普通绒面电池。用光谱响应分析手段分析硅纳米线电池光伏性能的影响因素,并提出解决办法。

Large area aligned identical silicon nanowires array was prepared on mono-crystalline p-Si（100） wafers via the metal-assisted electroless etching at room temperature, 1.01 × 10^5 Pa. The morphologies and reflection spectra of the samples prepared at different nitric acid silver concentrations were analyzed. In addition, the photovoltaic performance of solar cell silicon based on the nanowires array was investigated. The results show that the optimal concentration of nitric acid silver concentration is 0.02 mol/L. The photoelectric conversion property of solar cells based on the silicon nanowire arrays were better than that of the ordinary texturing solar cell. The photovoltaic performance of silicon nanowires array was also analyzed via the spectral response of different wavelengths.