摘要
The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model. This model takes into account the primary processes-excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges-and therefore, can adequately represent the discharge plasma. We analyze the effects of very high frequency （VHF） on the densities of species （e, H, SiH3, SiH＋ and SiH2） in such discharges using the model. The simulation results show that the densities of SiH3, SiH＋, H, and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz. It is found that the deposition rate of uc-Si：H film depends on the concentration of SiH3, SiH＋, SiH2, and H in the plasma. The effects of VHF on the deposition rate and the amount of crystallized fraction for uc-Si：H film growth is also discussed in this paper.
The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model. This model takes into account the primary processes-excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges-and therefore, can adequately represent the discharge plasma. We analyze the effects of very high frequency （VHF） on the densities of species （e, H, SiH3, SiH＋ and SiH2） in such discharges using the model. The simulation results show that the densities of SiH3, SiH＋, H, and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz. It is found that the deposition rate of uc-Si：H film depends on the concentration of SiH3, SiH＋, SiH2, and H in the plasma. The effects of VHF on the deposition rate and the amount of crystallized fraction for uc-Si：H film growth is also discussed in this paper.
基金
supported by National Natural Science Foundation of China(Nos.10775026,50537020,and50528707)
