摘要
Thin films of SnSe and SnSe2 have been deposited using the ultrasonic spray pyrolysis（USP） technique.To the best of our knowledge this is the first report of the deposition of SnSe and SnSe2 thin films using a single spray solution.The use of a single spray solution for obtaining both a p-type material,SnSe,and an n-type material,SnSe2,simplifies the deposition technique.The SnSe2 thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV.The Hall measurements were used to determine the resistivity of the thin films.The SnSe2 thin films show a resistivity of 36.73 Ωcm and n-type conductivity while the SnSe thin films show a resistivity of 180 Ωcm and p-type conductivity.
Thin films of SnSe and SnSe2 have been deposited using the ultrasonic spray pyrolysis（USP） technique.To the best of our knowledge this is the first report of the deposition of SnSe and SnSe2 thin films using a single spray solution.The use of a single spray solution for obtaining both a p-type material,SnSe,and an n-type material,SnSe2,simplifies the deposition technique.The SnSe2 thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV.The Hall measurements were used to determine the resistivity of the thin films.The SnSe2 thin films show a resistivity of 36.73 Ωcm and n-type conductivity while the SnSe thin films show a resistivity of 180 Ωcm and p-type conductivity.
基金
carried out with financial assistance from the DGAPA- PAPIIT project (IN 113409)
