Analysis of the subthreshold characteristics of vertical tunneling field effect transistors

Analysis of the subthreshold characteristics of vertical tunneling field effect transistors

导出

摘要 Subthreshold characteristics of vertical tunneling field effect transistors（VTFETs） with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device simulator.Three types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping concentrations.Band diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor FET.This VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two components.To our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and valid.Our results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics. Subthreshold characteristics of vertical tunneling field effect transistors（VTFETs） with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device simulator.Three types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping concentrations.Band diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor FET.This VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two components.To our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and valid.Our results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.

作者韩忠方茹国平阮刚

机构地区 State Key Laboratory of ASIC and System

出处《Journal of Semiconductors》 EI CAS CSCD 2013年第1期28-34,共7页 半导体学报（英文版）

基金 Project supported by the International Research Training Group

关键词 tunneling field effect transistor metal-oxide-semiconductor field effect transistor subthreshold swing tunneling field effect transistor metal-oxide-semiconductor field effect transistor subthreshold swing

分类号 TN386 [电子电信—物理电子学] TN312.2 [电子电信—物理电子学]

引文网络
相关文献

参考文献16

1Seabaugh A C. Low-voltage tunnel transistors for beyond CMOS logic. Proc IEEE, 2010, 98(12): 2095.
2Woo R. Band-to-band tunneling transistor scaling and design for low-power logic applications. PhD Dissertation, Stanford Uni- versity, 2009.
3Reddick W M, Amaratunga G A J. Silicon surface tunnel transis- tor. Appl Phys Lett, 1995, 67(4): 494.
4Toriumi A, Koga J. Negative differential conductance in three- terminal silicon tunneling device. Appl Phys Lett, 1996, 69(10): 1435.
5Wang P F, Nirschl T, Schmitt-Landsiedel D, et al. Simulation of the Esaki-tunneling FET. Solid-State Electron, 2003, 47(7): 1187.
6Han Z F, Ru G P, Ruan G. A simulation study of vertical tun- nel field effect transistors. Proceedings of IEEE 9th International Conference on ASIC (ASICON), 2011:665.
7Park B G, Choi W Y, Lee J D, et al. Tunneling field-effect transis- tors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett, 2007, 28(8): 743.
8Bowonder A, Patel P, Jeon K, et al. Low voltage green transis- tor using ultra shallow junction and hetero tunneling. Extended Abstracts of IEEE 8th International Workshop on Junction Tech- nology, 2008:93.
9Bowonder A, Patel P, Jeon K, et al. Low-voltage green transistor using hetero-tunneling. Proceedings of IEEE Silicon Nanoelec- tronics Workshop, 2008:5.
10Hu C, Chou D, Patel P, et al. Green transistor-a VDD scaling path for future low power ICs. Proceedings of IEEE Interna- tional Symposium on VLSI Technology, Systems and Applica- tions, 2008:14.

1李煜,李瑞伟,王纪民.内嵌设备模型的离子注入工艺模拟程序[J].Journal of Semiconductors,2003,24(5):556-560.
2李煜,李瑞伟,王纪民.集成电路工艺模拟中的离子注入设备模型研究[J].Journal of Semiconductors,2002,23(3):319-322.
3Amit Chaudhry,J.N.Roy,Garima Joshi.Nanoscale strained-Si MOSFET physics and modeling approaches:a review[J].Journal of Semiconductors,2010,31(10):19-23.
4Sanghyun Lee,Kent J. Price.Variation of Quantum Efficiency in CZTSSe Solar Cells with Temperature and Bias Dependence by SCAPS Simulation[J].Journal of Energy and Power Engineering,2017,11(2):69-77.
5靳晓诗,刘溪,吴美乐,揣荣岩,Jung-Hee Lee,Jong-Ho Lee.Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs[J].Journal of Semiconductors,2012,33(12):27-30.
6林体元,庞磊,王鑫华,黄森,刘果果,袁婷婷,刘新宇.Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications[J].Journal of Semiconductors,2015,36(7):83-89.
7吴鹏,吴军民,刘川,陈磊,张刚,黄在朝.软件定义网络在电力数据通信网中的应用研究[J].信息技术,2014,38(1):52-55. 被引量：12
8闫俊达,王权,王晓亮,肖红领,姜丽娟,殷海波,冯春,王翠梅,渠慎奇,巩稼民,张博,李百泉,王占国,侯洵.Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors[J].Chinese Physics Letters,2015,32(12):113-116.
9房玉龙,冯志红,李成明,宋旭波,尹甲运,周幸叶,王元刚,吕元杰,蔡树军.High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model[J].Chinese Physics Letters,2015,32(3):117-120.
10张宗琪.SDH再生中继设备模型功能探讨[J].重庆邮电学院学报（自然科学版）,1996,8(3):70-74.

Journal of Semiconductors

2013年第1期

浏览历史

内容加载中请稍等...

Analysis of the subthreshold characteristics of vertical tunneling field effect transistors

参考文献16

相关作者

相关机构

相关主题

浏览历史