摘要
With the impact of the non-uniform turn-on phenomenon,the ESD robustness of high-voltage multifinger devices is limited.This paper describes the operational mechanism of a GG-nLDMOS device under ESD stress conditions and analyzes the reason that causes the non-uniform turn-on characteristics of a multi-finger GGnLDMOS device.By means of increasing substrate resistance,an optimized device structure is proposed to improve the turn-on uniformity of a high-voltage multi-finger GG-nLDMOS.This approach has been successfully verified in a 0.35 m 40 V BCD process.The TLP test results reveal that increasing the substrate resistance can effectively enhance the turn-on uniformity of the 40 V multi-finger GG-nLDMOS device and improve its ESD robustness.
With the impact of the non-uniform turn-on phenomenon,the ESD robustness of high-voltage multifinger devices is limited.This paper describes the operational mechanism of a GG-nLDMOS device under ESD stress conditions and analyzes the reason that causes the non-uniform turn-on characteristics of a multi-finger GGnLDMOS device.By means of increasing substrate resistance,an optimized device structure is proposed to improve the turn-on uniformity of a high-voltage multi-finger GG-nLDMOS.This approach has been successfully verified in a 0.35 m 40 V BCD process.The TLP test results reveal that increasing the substrate resistance can effectively enhance the turn-on uniformity of the 40 V multi-finger GG-nLDMOS device and improve its ESD robustness.
