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Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS 被引量：2

Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS
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摘要 Contrary to general understanding, a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process. Such a phenomenon in a gate-grounded NMOSFET （GGNMOS） was investigated, and the current spreading effect was verified as the predominant factor. Due to transmission line pulse （TLP） measurements and Sentaurus technology computer aided design （TCAD） 2-D numerical simulations, parameters such as current gain, on-resistance and power density were discussed in detail. Contrary to general understanding, a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process. Such a phenomenon in a gate-grounded NMOSFET （GGNMOS） was investigated, and the current spreading effect was verified as the predominant factor. Due to transmission line pulse （TLP） measurements and Sentaurus technology computer aided design （TCAD） 2-D numerical simulations, parameters such as current gain, on-resistance and power density were discussed in detail.
作者 吴道训 蒋苓利 樊航 方健 张波
机构地区 State Key Laboratory of Electronic Thin Films and Integrated Devices
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第2期41-45,共5页 半导体学报（英文版）
关键词 ESD channel length GGNMOS current spreading ESD channel length GGNMOS current spreading
分类号 TN386.1 [电子电信—物理电子学]
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参考文献11

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同被引文献16

  • 1邱亮,张之圣.ESD的物理失效分析及放电路径的研究[J].电子测量技术,2007,30(3):6-9. 被引量：10
  • 2陈强,郭志蓉,周晶.在半导体器件中进行失效分析的方法:中国,101769876A[P].2010-07-07.
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  • 6马忠良,贾新章.CMOS集成电路ESD研究[D].西安:西安电子科技大学,2008.
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  • 8孙静,钱峰.对栅氧化层进行失效分析的方法:中国,101996911A[P].2011-03-30.
  • 9ALVAREZ D, ABOU-KHALIL M J, RUSS C, et al. Analysis of ESD failure mechanism in 65 nm bulk CMOS ESD NMOSFETs with ESD implant [ J ]. Microelectronics Reliability, 2006, 46 (9/10/11): 1597 - 1602.
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Journal of Semiconductors
2013年 第2期

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