期刊文献+

DG型电子加速器自校正扫描系统的研制 被引量:1

Development of self-correcting scanning system for DG-type electron accelerators
下载PDF
导出
摘要 为了提高DG型电子加速器束流扫描均匀度、解决束流中心偏移、提升束流引出效率,开发了一种既可实现X,Y两相互垂直方向均匀扫描又可以实现束流中心自动对中调节的扫描系统。介绍了扫描磁铁及其电源参数的选取依据,阐述了将扫描磁铁和束流校正线圈进行整体式设计的扫描系统扫描电流成形方式及自动对中电路信号调制过程,包括为提高加速器运行安全性而设计的连锁保护信号。产业化现场使用事实已证明,该系统设计完全达到了设计要求,具有优良的扫描均匀度和长时间工作稳定可靠性。 To improve the scanning uniformity and beam extraction efficiency, and to solve the problem of beam central de- viation of DG--type electron accelerators, a scanning system has been developed, whose scanning coil and self-correcting coil are set in the same magnetic core. The system can scan along the X and Y axes and adjust the beam to the centre of the extraction win- dow automatically. This paper introduces the parameter-selection basis of scanning magnet and scanning power-supply. We ex- pound the design principle of the shaping circuit of the triangle wave current based square wave voltage. Moreover, the interlock signal from the scanning system is used to ensure the accelerator's operation safety and stabilization. It is proved that the scanning system completely achieves the industrialization demand and the scanning uniformity meets the industrial irradiation requirements by the fact that the accelerator with the steady self-correcting scanning system is successfully used in practice.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2013年第2期481-484,共4页 High Power Laser and Particle Beams
基金 西部之光博士项目(Y015020XBB)
关键词 电子加速器 扫描电源 扫描磁铁 自校正 扫描均匀度 electron accelerator scanning power-supply scanning magnet self-correcting scanning uniformity
  • 相关文献

参考文献11

二级参考文献17

  • 1周锡嘏.功率MOSFET发展近况[J].微电子学,1994,24(2):1-6. 被引量:4
  • 2何勇,陈德怀,林福昌,李劲.强激光脉冲电源电磁干扰的仿真与测试[J].强激光与粒子束,2005,17(6):921-924. 被引量:9
  • 3Salimov R A, Cherepkov V G, Golubenko J I, et al. Radiation Physics and Chemistry, 2000, 57:661-665
  • 4Ivanov A V, Tiunov M A. ULTRASAM - 2D Code for Simulation of Electron Guns with Ultra High Precision. Proceedings of ECAP 2002, Paris, France, 2002.1634-1636
  • 5Vasic D, Cost F, Sarraute E. A new MOSFET & IGBT gate drive insulated by a piezoelectric transformer[A]. PESC'2001[C]. IEEE 32nd Annual,2001,3:1479-1484.
  • 6De Vries I D. A resonant power MOSFET/IGBT gate driver[A]. APEC'2002[C]. Seventeenth Annual IEEE,2002,1:179-185.
  • 7Van De Sype. Van Den Bossche, Maes J. Gate-drive circuit for zero-voltage-switching half and fullbridge converters [J]. Industry Applications, Proceeding of IEEE Transactions, 2002,38 (5) : 1380-1388.
  • 8Miura-Mattausch M, Ooshiro S, Suetake M. Circuit simulation models for coming MOSFET generations[A]. SISOAD'2000. Proceeding of International Conference[C]. 2000. 106- 111.
  • 9Jiang Xueping, Jayasumana A P, Zhang Weijing. A proper deep submicron MOSFET model (PDSMM) and its application for delay modeling of CMOS inverters [A ]. Solid-State and Integrated-Circuit Technology, Proceedings of 6th International Conference [C ]. 2001,2 : 875 - 878.
  • 10Yasiom U, Khanngern W, Nitta S. The study and analysis of the conducted EMI suppression on power MOSFET using passive snubber circuits[A]. Electromagnetic Compatibility. Proceedings of 3rd International Symposium[C]. 2002. 561 - 264.

共引文献32

同被引文献12

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部