颗粒膜厚度对表面传导电子发射的影响

Influence of granular film thickness on surface-conduction electron emission

制备了不同厚度下的C-Ti颗粒膜用作表面传导电子发射的阴极发射薄膜,研究了不同颗粒膜厚度对电子发射特性的影响。将所制备阴极器件加载不同电压幅值下的等幅三角波,对器件进行电形成,结果表明:颗粒膜厚度为69nm的器件开启电压为32V,在33V时具有最大发射效率;颗粒膜厚度为855nm的器件开启电压为15V,在23V时发射效率最高;颗粒膜厚度为69nm的器件所形成的电压范围和电子发射效率都明显高于颗粒膜厚度为855nm的器件。

C-Ti granular films with different thickness were prepared, acting as the cathode emission film, to study the in- fluence of granular film thickness on electron emission characteristics. When symmetric triangular wave voltages of different mag- nitudes are applied to the prepared cathode device, electrical formation is then carried out to the devices. It is shown that the turn- on voltage of the 69 nm-thick-film equipped device is 32 V, with the emission efficiency reaching its maximum at 33 V, while the turn-on voltage of the 855 nm-thick-film equipped device was 23 V, with the maximum emission efficiency appearing at 23 V. It is also illustrated that the 855 nm-thick-film device has a much wider voltage range and a much higher electron emission efficiency than the 69 nm-thick-film one.