MOCVD脉冲生长对InGaN太阳能电池材料的影响

Influence of MOCVD Pulse Growth on InGaN Solar Cells Materials

通过对InGaN三元合金的生长方式做对比,发现在相同条件下,因常规生长过程中反应室In的浓度更高,生长出的InGaN中In组分更高。但是由于预反应的原因晶体质量较差,而脉冲生长由于源的分时输运,大幅减小了预反应的发生,提高了晶体质量。但由于生长时反应室In原子浓度变小,In的组分会降低,也会减小In滴的析出。

In this paper, the methods of InGaN alloy growth are compared. It is found that by conventional method the InGaN alloy tends to have a higher component because of a higher concentration of In atoms in the cham- ber but results in a poor crystallization quality as the pre-reaction. The one grown by pulse method tends to have a lower component of In and In drop because of a lower concentration of In atoms in the chamber but results in a good crystallization quality as the reduction of pre-reaction.