高热稳定性聚酰亚胺抗静电复合薄膜的制备与表征

Preparation and Characterization of the Antistatic Polyimide Composite Films with High Thermal Stability

采用原位聚合法制备了聚酰亚胺(PI)/掺锑二氧化锡(ATO)抗静电复合薄膜。采用红外光谱分析仪FTIR(ATR)、扫描电镜(SEM)、热失重仪(TGA)、热机械分析仪(TMA)及电子万能试验机测试了薄膜的结构和性能。结果表明,ATO导电粒子在PI中分散良好,PI/ATO复合薄膜的热稳定性比纯PI明显提高,ATO的加入可以有效增强PI的抗静电性能,当质量分数为10%时,复合薄膜表面电阻率可降至1010Ω,达到抗静电材料要求的范围。

The polyimide/antimony-doped tin oxide （PI/ATO） antistatic composite film was prepared by in-situ polymerization. The chemical structure and properties of the flim were characterized by FT-IR, SEM, TGA, TMA, and electronic universal testing machine. The results showed that ATO conductive particles dispersed in PI homogeneously, the thermal stability of PI/ATO composite films improved significantly than the pure PI. The introducing of the ATO enhanced the antistatic properties of the PI films. When the quality percentage content of the conductive ATO was 10% , the surface resistivity of the composite film orders of magnitude was 10 ^10 Ω, which achieved the range of the antistatic requirements.