ZnIn_2S_4半导体催化剂的制备、表征及产氢性能研究

Preparation,Characterization and Photocatalytic Activity for Hydrogen Production of ZnIn_2S_4 Semiconductor Catalyst

采用沉淀—水热法制备了系列ZnIn2S4半导体催化剂,并通过XRD、UV-Vis、XPS和SEM等分析手段对上述催化剂进行了表征。考察了反应液pH值、反应液浓度、水热反应温度等制备条件对ZnIn2S4半导体催化剂的形貌结构和产氢性能的影响。试验结果表明,制备条件对催化剂的晶体结构及其微观形貌影响显著。制备的ZnIn2S4半导体催化剂为六方晶型,吸收边为500nm,其中ZnIn2S4-160-24表现出较好的催化产氢性能,产氢速率可达764μmol/(h·g)。

A series of ZnIn2S4 semiconductor catalysts were synthesized via precipitation - hydrothermal method. The above - prepared catalysts were characterized by X - ray diffraction, UV - Vis diffusive reflectance spectroscopy, X - ray photoelectron spectroscopy, and field emission scanning electron microscopy. The effect of the preparation conditions, such as pH value, reactant concentration and hydrothermal reaction temperature on the morphology and photoeatalytic activity of ZnIn2S4 semiconductor cata- lysts were investigated. The results demonstrated that preparation conditions had great effects on the crystal structure and micro - morphology. ZnIn2S4 semiconductor catalysts could be indexed as a pure hexagonal phase, the absorption edge was 500 nm, The ZnIn2S4 - 160 -24 showed the highest activity toward photoeatalytic hydrogen production and the average rate of hydrogen evolution reached 764 μmol/h · g.