高速InP基半导体电光调制器行波电极结构研究

Design of Traveling-wave Electrodes for High-speed InP-based Semiconductor Electro-optic Modulators

对PIN型和NIN型两种InP基Mach-Zehnder电光调制器的电极结构进行了数值仿真研究,从而确定出适于这两种电光调制器的行波电极结构。仿真结果表明,NIN型电光调制器可采用简单的单臂类微带电极,而PIN型电光调制器需采用周期容性负载电极,以达到良好的阻抗匹配特性和传输特性。进一步地,提出了将串联推挽式行波电极结构应用于PIN型电光调制器,可以简化制作工艺并获得良好的微波特性。

Traveling-wave electrode configurations suitable for PIN-and NIN-type InP-based Mach-Zehnder electro-optic modulators are studied through numerical simulations.The results indicate that good microwave performance can be secured for NIN-type modulator with microstrip electrodes and PIN-type modulator with capacitively-loaded traveling-wave electrodes.Meanwhile,a series push-pull electrode for PIN-type modulator is proposed to simplify the fabrication process as well as improving the microwave performance.