第三代红外探测器的发展与选择

Choice and Development of the Third-Generation Infrared Detectors

随着军事应用对高性能、低成本红外技术的需求,红外探测器像元数目从少于100元的一代发展到10万元中等规模的二代,到百万像素的三代,何谓第三代?在众多的材料和器件中,可作为第三代红外探测器的材料以及器件有哪些?在红外探测器技术飞速发展的今天,我们该作如何的选择?结合以上问题,对当前国际上作为第三代红外探测器选择的碲镉汞、量子阱以及Ⅱ类超晶格探测器材料、器件进行了分析,总结了第三代红外探测器的特征,为国内第三代红外探测器的发展提供选择与参考。

With the requirement of military application and development of the infrared detectors toward high performance and low cost, infrared detectors continuously develop from the first generation with low density pixel number below 100 to second generation with middle number ofpixel about 100 000 till to third Generation with megapixel number. What is the third generation infrared detector？ How to choose the device and material as the third generation infrared detector？ HgCdTe, quantum well infrared detectors and type-II superlattices infrared detectors have been thought as third generation infrared detectors in the world, the corresponding materials and devices were discussed in order to understand the characterization of the three kinds detectors, the aim is to advance the development of our third generation infrared technology.