77K低温下MOSFET非固有电容参数提取研究

Parameter Extraction of Extrinsic Capacitance of MOSFET at 77 K Cryogenic Temperature

77K低温参数是制冷型碲镉汞红外焦平面探测器读出电路设计与精确仿真的关键点之一。通过研究MOSFET非固有电容的特性,并基于BSIM3通用模型对电容的描述,在77K低温下进行测试提取,得到了相关的模型参数。嵌入SPICE软件仿真对比,证明了参数的准确性。

Cryogenic parameter in 77K is a key point of cooled MCT infrared detector readout IC design. This paper is a research of characteristic of extrinsic capacitance in MOSFET. Based on the description of capacitance in BSIM3 model, the parameters are measured and extracted at cryogenic temperature. And the parameters are proved accurate by simulate in SPICE.