双极型晶体管非理想效应的Gummel-Poon模型分析及其在IC中的应用

Analysis and Application of Gummel-Poon Model on Non-ideal Effects of Bipolar Transistor in Integrated Circuit

主要研究双极结型晶体管BJT(Bipolar Junction Transistor)的Gummel-Poon模型在集成电路设计中的应用。用Gummel-Poon模型对BJT的一些非理想效应进行定量分析,包括基区非均匀掺杂,基区宽度调制效应,大注入效应,产生-复合作用等。从BJT的基本电流用方程出发,用Gummel-Poon建立起器件性能与材料、结构和工艺参数之间的联系。分析基区多数载流子电荷的作用,建立起器件性能与基区多数载流子电荷的联系。论文中将该模型与现代BJT的典型结构参数和工艺参数结合起来,应用于现代BJT的理论分析之中,通过具体计算给出了应用实例。

Non-ideal effects of bipolar junction transistor （BJT） in integrated circuit were analyzed in depth based on Gum- mel-Poon model in this paper. The non-ideal effects of BJT in IC, such as base width modulation, high injection, non-uniformly base doping, generation-recombination effects, were quantitatively analyzed by using Gummel-Poon model. The performances of BJT are connected with material, geometrical structure and technological parameters based on Gummel-Poon model. The rela- tionship between electrical performances and majority carrier charge distribution in base region was established to analyze non- ideal physical effects. Gummel-Poon model was combined with typical structural and technological parameters of modem bipo- lar transistor, and applied in theoretical analysis of modem bipolar transistor in this paper. Finally, a practical application exam- ple is represented.