Ge_xSi_1-x/Si异质结构的近红外吸收光谱测量

Measurement of Near Infrared Absorption Spectra of Ge_x Si_(1_x)/Si Heterostructures

测量分析了采用 RRH/VLP—CVD 方法外延生长的 Ge_xSi_(1-x)/Si 异质结构中 Ge_xSi_(1-x)合金薄层的近红外吸收光谱。由谱线计算出 Ge_(0.15)Si_(0.85)与 Ge_(0.45)Si(0.55)合金层的带隙分别为1.02eV 和O.88eV,与相同组分的体合金一致。结果表明用红外吸收光谱测量研究异质结构薄层材料的能带结构及带隙是一种准确、简便的方法。

Measurements and analysis are made on near infrared absorption spectra of Ge_xSi_(1-x) layers in Ge_xSi_(1-x)/Si heterostructures epitaxially grown by RRH/VLP-CVD.calculated from the spectrum curves,band gaps of Ge_(0.15)Si_(0.(?)5) and Ge_(0.45)Si_(0.55)alloy layers are 1.02eV and 0.88eV respectively,which agree well with the values of bulk alloys with the same composition.Results indic- ate that it is an accurate and convenient way to measure and investigate the energy band structures and band gaps of heterostructure layers with infrared absorption spectra.