InGaAsP/Inp双区共腔激光器的内部参数

Internal Parameters of InGaAsp/InP Lasers with Double Section in Commom Cavity

根据《双区半导体激光器的稳定性理论》,分析了 InGaAsp/Inp 掩埋异质结构双区共腔激光器的实验结果,计算了这种器件的内部参数。结果表明:内部光耦合随着温度变化是改变器件工作状态的主要因素;阈值电流偏高与器件工艺相关的界面缺陷、结构漏电关系极大;结构漏电可以提高光输出功率。

Analysis on experimental results of InGaAsP/InP buried hetero- structure lasers with double-section in a common cavity is made based on the publication of《A Theory on Stability of Double-Section Semiconductor Lasers》, along with the calculation of their internal parameters.It is shown that the de- pendence of internal light-coupling on temperature is a main factor for changing the working state of the devices;the higher threshold current depends on inter- face defects and electrical leakage of the structure,which are interrelated to fabrication technology of the devices;the leakage can increase the optical output power.