摘要
在亚微米的半导体生产制造技术中,二氧化硅工艺中的颗粒污染会造成漏电流形成击穿电压,已经成为产品良率的主要影响因素。文章主要针对目前市面上流行的TEL Alpha-8SE的立式APCVD二氧化硅炉管制造工艺中所遇到的颗粒污染问题进行研究。通过大量的对比性实验,进行排查与分析,并利用各种先进的实验设备和器材,炉管、高倍度电子扫描设备、先进的光学仪器和缺陷分析设备等,找到产生颗粒污染的原因,并且找到解决问题的方案。在减少机台停机时间的同时,提高了机台的使用率,而且改善了颗粒污染的状况,最终获得良率的提升,优化了制造工艺。
In the semiconductor manufacturing, the particle will cause the leakage increase and break out the device at the oxidation silicon process in furnace, and its had been an mainly factor that affect the yield of product. This article is to investigate the problem of particle issue with the APCVD furnace by TEL Alpha- 8SE.For the testing data, analyze it and use the measurement equipment to find out the root cause, then to solve the problem of particle. Decrease the downtime and improve the utility of equipment, then the particle performance and the yield of product is improved, the process also has been optimized.
出处
《电子与封装》
2013年第1期34-37,共4页
Electronics & Packaging