准平面型InAlAs/InGaAs异质结双极晶体管和单片集成激光器驱动电路

A Quasi-Planar InAlAs/InGaAs HBT and Related Monolithic Integrated Laser Driving Circuit

提出和制作了准平面型InAlAs/InGaAs异质结双极晶体管。该管主要采用硅离子注入法在半绝缘磷化铟衬底中形成隐埋型集电区以代替台面型集电区。晶体管的实测结果如下:h_(fe)=100,f_T=10GHz(V_(CE)=3V,I_c=10mA)。作为单片光电集成方面的实例,研制成功了由三个InGaAs/InAlAsHBT和一个电阻组成的激光器驱动电路,其电流调制速率高达4Gbit/s。

A quasi-planar InAlAs/InGaAs HBT was proposed and demonstrated. Instead a conventional mesa type collector an embedded collector formed by selective Si implantation into semi-insulating Fe doped InP substrate was adopted,The current gain of 100 and cut-off frequency fr of 10 GHz were measured,As an application of the InAlAs/InGaAs HBT to OEIC,a laser driving circuit comprised of three HBT's and one resistor has been demonstrated. Its current modulation bit rate up to 4Gbit/s were obtained.