PECVD Si_xO_yN_z膜及其在GaAs VHSIC中的应用

PECVD SixOyNz Film for GaAs VHSIC

采用SiH_4,N_2O和NH_3反应气体生长了Si_xO_yN_z膜,其特性取决于反应气体流量、射频功率、反应室压力和衬底温度。用折射率为1.71的Si_xO_yN_z做GaAs注Si^+包封退火膜,它比SiO_2或Si_3N_4有更高的电激活。该膜作为互连隔离介质已用于GaAs高速电压比较器。实验结果表明:Si_xO_yN_z是一种有希望的介质膜。

Si_xO_yN_z film was deposited by employing the mixed gas of SiH_4, N_2O and NHs.Its characteristics depend on the flow rate of reactive gas, RF power, pressure of reaction chamber, and substrate temperature.Si_xO_yN_z has 1.71 refractive index, and it has higher electrical activation as used for an annealing encapsulated film of Si^+-implated GaAs than that SiO_2 or Si_3N_4 has. As a dielectric for isolated interconnections the film was used in GaAs high speed voltage comparator.The experimental results indicate that Si_xO_yN_z is a promising dielectric film.