改善GaAs MESFET输出功率线性的载流子浓度分布设计与制备

Design and Fabrication of Carrier Distributiou for Improving Linear Output Power of GaAs MESFET

经过对GaAs MESFET输出功率及其线性失真的综合分析,提出了无拖尾双峰n^+n载流子浓度分布的最佳设计。用Si离子注入和Be注入埋层方法,以及优化的快速退火技术,满意地制备出所希望的无拖尾双峰n^+n浓度分布。用于DX571功率GaAs MESFET器件时的研究表明,与常规注入分布的器件相比,无拖尾n浓度分布器件在4GHz下测得的1dB增益压缩功率输出增加了0.4W;在输入信号提高50mW情况下增益仍为9dB,漏极效率提高3％,加上n^+注入后饱和压降又下降0.3V,预计其线性输出功率能力将会有进一步改善。

Based on an overall analysis of the output power performance of GaAs MESFET and its linear distortion, the optimal design of tailless double-peak n^+n carrier distribution is presented. We have satisfactorily made the distribution with Si-ion implantation and Be implanted buried layer, as well as RTA process. In application to the fabrication of power GaAs MESFET DX571, the results showed that the output power(P_(-1dB)) of this device was increased by 0.4W at 4GHz, compared with conventional implanting distribution devices. When the input power increased by 50mW, the gain was still equal to 9dB, the drain efficiency improved by 3％. The saturation voltage drop was moreover decreased by 0.3V because of additional n^+ implantation. We expected the ability of linear output power will be further raised.