光电器件介质薄膜电特性检测中的特殊问题及解决办法

Special Problems in Measuring the Electrical Characteristics of Dieletric Film in Photodevice and Solving Methods

本文提出了InP系光电器件介质薄膜电特性检测中所遇到的两个特殊问题:管芯倒装在镀铟铜基座上测量时铟层凹陷致使介质薄层边缘短路;芯片解理条边缘金属须搭连产生短路。还介绍了问题的分析过程和解决办法。

This paper presents two problems in measuring the electrical characteristics of dieletric film in Inp photo- device: the one was the short-circuit at the edge of dieletric film caused by In layer collapse as the flip chip on copper base In-plated was measured, the other was the short-circuit caused by connection of metal whiskers at the edge of cleavage strip of the chip. The analyses and solving methods for the problems are also introduced.