铌掺杂锆钛酸钡陶瓷制备及介电性能的研究

Study on the Preparation and Dielectric Properties of Niobium Doped Ba(Zr_xTi_(1-x))O_3 Relaxor Ferroelectric

采用传统的固相反应法制备了BaZr0.15Ti0.85-xNbxO3陶瓷,其中x分别为:0,0.1%,0.2%,0.3%,1.5%,1.8%,2.0%,2.5%,3.0%,0.06,0.09,0.12,0.15,0.18,并研究了最佳烧结工艺。在Ba(Zr0.15Ti0.85)O3陶瓷中掺铌时能起到压峰和移峰作用,在Ba(Zr0.15Ti0.85)O3中掺杂微量的铌时,可以使Ba(Zr0.15Ti0.85)O3陶瓷的介电常数最大值有轻微的增大,但增大掺杂量时,可以起到较为明显的压峰作用。Nb的移峰效应约为-20℃/mol%。结果表明:Nb微量掺杂改性后的陶瓷在介电性能上总体都有所提高,当掺杂Nb的物质的量分数为0.2%时,陶瓷介电性能的改善最为显著,介电常数在100 Hz时达17 000,而介电损耗较小(1 kHz时在0.05左右)。通过掺杂改性后,介-温特性得到不同程度的改善。

Ceramics with different compositions along the solid solution Ba （Zr0.15 Ti0.85-x Nbx）03 （x = 0, 0.1% ,0.2% ,0.3% 1.5%, 1.8% ,2.0% ,2.5% ,3.0% ,0.06,0.09,0.12,0.15,0.18 ） have been pre- pared by solid state reaction and the best sintering technology was studied. The relations between the fraction of Nb and dielectric properties were studied. Doping Nb can shift the curie temperature to low temperature and restrain the curie peak of Ba（ Zr0.15Ti0.85 ）03 ceramics. The cuire peak can increase slightly when doped minim Nb in Ba（ Zr0.15Ti0.85 ）03 ceramics, but it has obvious effect on restraining curie peak when continuing to dope Nb. The shifting peak effect of Nb was about -20℃/mol%. The results indicated that the dielectric properties of modified ceramics were whole improved. The improvement of dielectric properties was the most noticeable when the fraction of Nb was 0.2%. The dielectric constant reached 17 000 at 100 Hz while the small dielectric loss（ 1 kHz,0. 05 ）. After doping the modification, the dielectric -temperature properties of BZT ceramics were improved to different extent.