2GOURLEY P L, FRITZ I F, DAWSON L R, et al. Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy [ J ]. APL, 1988,52 (5) : 377-379.
3NGUYEN L D, RADULESCU M C, FOISY M C, et al. Influence of quantum well width on device performance of Al0.3Ga0.7AS/ In0.25Ga0.75As(on GaAs) MODFETs [ J]. IEEE Trans on ED, 1989,36: 833-836.
4CHEN Z,ZHENG Y K, LIU X Y, et al. Device characteristics comparison between GaAs single and double delta-doped pseudom orphic high electron mobility transistors [ J ]. Chinese Journal of Semiconductors, 2004,25 (3) : 247-251.
5LEADLEY D R, FLETCHER R, NICHOLAS R J, et al. Intersubband resonant scattering in GaAs- Ga1-x A1x As heterojunctions[ J]. Phys Rev, 1992, B(46) : 12439-12447.
6LEADLEY D R, NICHOLAS R J, HARRIS J J, et al. Influence of acoustic phonons on inter-subband scattering in GaAs- GaA1As heterojunctions [ J ]. Semicond Sci Technol, 1989, 4 (10) :885-889.
7LOOK D C, JOGAI B, STUTZ C E, et al. Magneto-Hall characterization of delta-doped pseudomorphic high electronic mobility transistor structures[ J]. JAP, 1994,76 ( 1 ) : 328-331.
