摘要
测量了分子束外延(MBE)生长的调制掺杂n-GaAlAs/GaAs的光调制反射光谱(PR),研究了光谱结构和三角阱中子能级的关系以及光反射调制谱与二维电子气(2DEG)浓度的依赖关系.实验结果与理论分析符合得较好.
The photoreflectance (PR) spectra of modulated-doped n-GaAlAs/GaAs structures gro-wn by Molecular Beam Epitaxy (MBE) are measured. The correlation between spectroscopicfeatures and sublevels in the triangular potential well and the dependence of PR spectra onthe two-dimensional electron gas (2DEG) concentration, are investigated. The experimentalresults are in good agreement with the theoretical analysis.
关键词
掺杂
异质结
反射光谱
MBF
半导体
n-GaAlAs/GaAs heterojunction
photoreflectance
Two-dimensional electron gas
MBE
