摘要
介绍了薄膜电池的制备技术及发展进程.采用射频等离子体加强气相沉积法(PECVD),制备了非晶锗硅薄膜,提出了制备优质非晶锗硅薄膜的条件和非晶锗硅薄膜的基本性质及其制备工艺中存在的问题和解决方案.
Preparative technique and development progress of thin-film cell are introduced. A-Si1-xGex：H thin films are prepared by radio frequency （RF） plasma-enhanced chemical vapor deposition （PECVD）. Factors of preparing high quality a-Si1-xGex： H thin films and the fundamental properties of films are presented. Furthermore, the existing problems in the preparation are proposed to which some possible solutions are discussed.
出处
《新乡学院学报》
2012年第6期497-500,共4页
Journal of Xinxiang University
基金
新乡学院"理论物理"重点建设学科资助项目
关键词
非晶半导体
非晶硅锗薄膜
太阳能电池
amorphous semiconductor
amorphous silicon-germanium thin film
solar cells
