摘要
利用XPS和AES对Al/a-Si∶H界面进行了研究.实验结果表明,最初阶段Al淀积在a-Si∶H上出现金属团.Al淀积量超过一定值后,起化学反应的Al和Si形成了互溶区,同时没有化学反应的Al在表面上形成金属Al层.此外,真空热处理加剧了Al/aSi∶H的界面反应和元素互扩散.
The Al/a-Si:H interface has been investigated by XPS and AES. The experimental resu-lts show that the Al Cluster which includes reacted Al and non-reacted Al occurs as initialformation of Al/a-Si:H interface, and after exceeding a critical Al deposition, intermixingregion of reacted Al and Si is formed at the interface, while non-reacted Al forms metal Allayer on the sample surface. Moreover, the interfacial reaction and element interdiffusion ofAl/a-Si:H are enhanced by thermal annealing.
基金
国家自然科学基金
关键词
金属非晶硅
界面
热处理
光发
Al/a-Si:H interface
Photoemission
Thermal annealing
Interfacial reaction and formation
