高压扩散结雪崩击穿参量的解析计算

Analytical Calculation of Avalanche Breakdown Parameters in High-Voltage Diffused p-n Junction

本文采用特定的指数函数分布近似首次求得了理想高压扩散结雪崩击穿参量的解析表达式.计算结果与V.A.K.Temple和M.S.Adler的数值结果相当一致,大大优于沿用至今的单突与线缓分布近似计算结果.这一方法不仅可用于指导与评价JTT的分析与设计,还可用于现代功率器件的穿通分析与设计、扩散结势垒电容的解析计算等.

By using a specialized exponential profile approximation, the analytical expressions ofideal avalanche breakdown parameters for high-voltage diffused p-n junction are found forthe first time. The calculated results coincide well with the full numerical ones obtained by V.A.K. Temple and M.S.Adler and are much more accurate than the results by using one-sidedabrupt and linearly graded profile approximation. The presented method can be used for notonly analysis and design of JTT but also punch-through evaluation in many modern powersemiconductor devices and analytic calculation of the barrier capacitance in diffused p-n ju-nction.