摘要
本文报道了用热壁熔体法,布里奇曼法等多种工艺技术制备的 CdTe、Cd_xZn_(1-x)Te单晶体材料和薄膜材料在1.8K深低温下光致发光的测量结果.从光致发光谱中识别出(D~°,X)、(D^+,X)、(A~°,X)、DAP等一系列谱线.逐个分析了它们的物理起源,并由此进一步讨论了晶体中的残留杂质、缺陷、结构完整性、组份均匀性等与材料质量有关的问题.
The experimental data on the photoluminescence of CdTe and Cd_(1-x)Zn_xTe prepared byseveral methods at temperature of 1.8 K are presented.The characteristic emissions (D°、X).(A°, X),DAP and others are identified, and the physical origins are analyzed . A detaileddiscussion about residual impurities, defects and composition inhomogeneities in these crystals.are given.
关键词
CDTE
Cd2nTe
低温
光致发光
Photoluminescence
CdTe
Cd_(1-x)Zn_xTe
Impurity
Defect
Composition Inhomogeneity
