摘要
用 Monte Carlo法模拟了亚微米 GaAs MESFET的直流特性.不同栅压下源漏电流与源漏电压的关系表明,器件具有较高的跨导.在栅下沟道区和栅漏之间的区域均有较强的电场,使得大量的电子在漏区进入能量较高的X带能谷.电子浓度的分布表明,电子的过冲过程主要发生在栅下沟道区,因而,在这一区域,电子的平均漂移速度较高.但在漏区由于电子处于有效质量大的X带能谷中,因此,在这一区域内,电子的平均漂移速度降低.
A submicrometer GaAs MESFET has been studied using the Monte Carlo particle mode-ling method. The steady out put characteristics have been successfully obtained.The simulateddevice has pretty high transconductance and well saturated output current. High electric fieldexists in both the conductive channel and the region between gate and drain.Within the device,there are a lot of hot electrons.Many of them are excited into X band in the drain region.Itcan be inferred that the electrons in the conductive channel have high drift velocity,but theiraverage drift velocity will be lowered in the drain region because the electrons in the X bandhave larger effective mass.
基金
国家自然科学基金
