摘要
我们发现含氮CZ-Si单晶中N-N对具有独特的等时退火行为,可划分成如下三个阶段:在400—600℃温区,N-N对的等时退火行为是不可逆的,而600—800℃温区是可逆的,大于800℃氮开始产生沉淀.我们还发现450℃预处理可加速在高温时氮的沉淀速率.本文对上述实验结果给予详细的讨论.
Experimental results show that the N-N pairs in the CZ-Si crystal containing itrogen havea distinctly annealling behavier.The isochronal annealing process can be divided into threestages as following: in the temperature range from 400℃-600℃ N-N pairs combine with in-terstitial to form N-N-O comples irreversibly, but from 600 to 800℃ it is reversible,and at tem-perature higher than 800℃ the Nitrogen begin to precipitate.Pre-treatment at 450℃ enhan-ced the precipitation of Nitrogen.Experimental results are discussed.
基金
高纯硅及硅烷国家重点实验室
