摘要
本文以矩量法和矩形面元上的自由空间格林函数为基础,采用多电像法给出一个计算电极,互联线寄生电容的新模型.采用该模型,我们开发了一个微机上运行实现自动矩形面元剖分的寄生电容计算程序,并对一个实际GaAs-MESFET的电极寄生电容进行计算,讨论了钝化层厚度,介电常数对电极寄生电容的影响.
A new model has been developed for the determination of the electrode and interconnec-tion parasitic capacitance using moment method and free space Green's function of rectangularsubarea.A program with this model has been developed on PC-computer.The program is ca-pable of auto-creating rectangular subarea.The dependence of the electrode and interconnec-tion parasitic capacitance of GaAs-MESFET on the thickness and permittivity of passivatioalayer is analyzed.
