摘要
本文提出并建立了具有漏电补偿功能的电荷DLTS方法.该方法具有与电容DLTS方法相同的率窗特性,同时又能直接测量深能级热发射的电荷响应而不必依赖耗尽区厚度的热发射调制,因此能用于半绝缘材料及耗尽层厚限定(如PIN,SOI结构)材料中的深能级测量.所建立的测量系统利用微机控制,可以在一次温度扫描中完成测量过程.利用该系统首次测量了 MBE生长硅衬底砷化镓材料上 LED二极管有源区中的深能级密度及位置,证实了其中高密度深能级的存在.
A novel charge DLTS method with leakage current compensation function is put forwardand demonstrated.Possessing the same spectroscopic characteristics as the conventional DLTStechnique has, it directly measures the charge response of deep level thermal emitting ratherthan relies on modulation of the depletion region width.Therefore,the new method can beused for materials such as semi-insulator, PIN and SOI structures.A micro-computer con-trolled measurement system is established. All the DLTS information is available by simplyone temperature scanning. The densities and positions of the deep levels in the active regionof the LED device on GaAs grown on Si by MBE have been measured for the first time.Existence of high density deep levels in the material is proved.
