摘要
在深低温强磁场条件下,对不同电学参数(掺杂量,补偿度等)的N-InSb材料的过热电子输运特性进行了系统研究,结果表明:高补偿材料能在较高电场区呈现出很强的非线性电导,对此,我们采用了二带导电模型进行了分析和讨论,提出了利用高补偿低浓度N-InSb材料来改善锑化铟远红外探测器性能的新方法,从而为锑化铟过热电子远红外探测器的选材提供了可靠依据.
Systimatic investigations have been made on the hot electron transport property of n-typeInSb material with different doping concentrations and compensation degrees under high magn-etic field and at very low temperature.The experiment results show that there is a strong non-linear conductivity under higher electric field for the InSb material with higher compensationdegree.The analysis and discussion are given based on the two-band model.It indicates that theperformance of InSb far-infrared detectors can be improved by choosing n-type InSb crystalwith higher compensation degree.This has been proved by our measurement data of detectorperformence.
