摘要
在不同烧结气氛下制备了Y和YF_3掺杂钛酸钡材料,借助于XRD、SEM、XRF和阻温测试分析仪,研究了烧结气氛对Y和YF_3掺杂钛酸钡材料结构和性能的影响.研究结果表明,低氧分压气氛可促进Y和YF_3掺杂钛酸钡材料的烧结,晶粒长大,而且这二种掺杂钛酸钡材料都是n型半导体.经过氩气气氛烧结的Y掺杂钛酸钡材料PTCR效应较弱;而对在氩气气氛中烧结的0.3mol%YF_3掺杂钛酸钡材料却观察到了较好的PTCR效应,这种效应的产生可能与F元素取代O位而导致材料的价控半导有关.
Positive Temperature Coefficient of Resistivity (PTCR) materials based on Yttrium and Yttrium Fluoride (YF_3) doped Barium titanate (BaTiO_3) ceramics were prepared in different sintering atmospheres, respectively. The effects of sintering atmospheres on the microstructure, property and mechanism of substitution of doped BaTiO_3 cerajmics were investigated by the means of XRD, SEM, XRF and R-T measuring instrument. Sintering in a low oxygen partial atmosphere can increase the densities of Y and YF_3 doped BaTiO_3 and make grain particle grow. Both Y and YF_3 doped BaTiO_3 ceramics are n-type semiconductor in which Y substitutes A-site and F substitutes O-site. Sintered in a argon atmosphere, Y doped BaTiO_3 exhibited little PTCR effect, however, an anomalous PTCR effect was observed when 0.3mol% YF_3doped BaTiO_3 ceramics was fired in Argon atmosphere. This phenomenon may be explained by a new O site substitution mechanism.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第4期691-696,共6页
Journal of Inorganic Materials