PTCR陶瓷材料的超低温烧结

Super Low Temperature Sintering for PTCR Ceramics

主要研究了ＢＮ对ＰＴＣＲ陶瓷材料低温烧结的作用．对Ｌａ掺杂ＢａＴｉＯ_３ＰＴＣＲ陶瓷，在１１００℃的低温下烧结可以得到室温电阻率为１５０ ·ｃｍ、升阻比为４．９个数量级的样品．对居里温度为３６０℃的高居里点（Ｂａ_（０．４）Ｐｂ_（０．６））ＴｉＯ_３ ＰＴＣＲ陶瓷材料，选用 Ｎｂ_２Ｏ_５为半导化剂，ＢＮ和ＡＳＴ为助烧剂时，可以在１０００℃左右的超低温下烧成．同时，对ＢＮ助烧剂的液相烧结机制进行了初步的探讨．

Semiconducting BaTiO_3 and high-curie-point (Ba_(0.4)Pb_(0.6))TiO_3 PTCR ceramics added with BN as a super low temperature sintering aid were investigated, and the function of BN on the liquid-phase sintering of PTCR ceramics was studied. In comparison with AST and Si_3N_4, BN is a more effective additive that can not only reduce the sintering temperature but also widen firing range. La-doped BaTiO_3 ceramics with BN addition can be obtained at 1100℃. The sifitered sample shows the PTC effect of 4.9 orders of magnitude and resistivity of 150·cm. Nb-doped (Ba_(0.4)Pb_(0.6))TiO_3 PTCR ceramics with the high Curie point of 360℃, added with BN and AST, can be sintered at 1000℃. The super low temperature sintering for the PTCR ceramics has not been reported before.