摘要
主要研究了BN对PTCR陶瓷材料低温烧结的作用.对La掺杂BaTiO_3PTCR陶瓷,在1100℃的低温下烧结可以得到室温电阻率为150 ·cm、升阻比为4.9个数量级的样品.对居里温度为360℃的高居里点(Ba_(0.4)Pb_(0.6))TiO_3 PTCR陶瓷材料,选用 Nb_2O_5为半导化剂,BN和AST为助烧剂时,可以在1000℃左右的超低温下烧成.同时,对BN助烧剂的液相烧结机制进行了初步的探讨.
Semiconducting BaTiO_3 and high-curie-point (Ba_(0.4)Pb_(0.6))TiO_3 PTCR ceramics added with BN as a super low temperature sintering aid were investigated, and the function of BN on the liquid-phase sintering of PTCR ceramics was studied. In comparison with AST and Si_3N_4, BN is a more effective additive that can not only reduce the sintering temperature but also widen firing range. La-doped BaTiO_3 ceramics with BN addition can be obtained at 1100℃. The sifitered sample shows the PTC effect of 4.9 orders of magnitude and resistivity of 150·cm. Nb-doped (Ba_(0.4)Pb_(0.6))TiO_3 PTCR ceramics with the high Curie point of 360℃, added with BN and AST, can be sintered at 1000℃. The super low temperature sintering for the PTCR ceramics has not been reported before.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第4期697-703,共7页
Journal of Inorganic Materials
基金
国家自然科学基金资助项目!(59672012)