8Ruething H, Umbach F. 600V-IGBT3: trench field stop technology in 70p, m ultra thin wafer technology[C]. ISPSD 2003, Cambridge, UK, 2003: 63-66.
9Kuang S. Design, modeling and application of the IGBT[D]. Edinburgh: Heriot-Watt University, 1999.
10Hefner A R. An improved understanding for the transient operation of the power insulated gate bipolar transistor(IGBT)[J]. IEEE Transactions on PowerElectric, 1990, 5(4): 303-313.