摘要
综述了迅速发展的计算机用新型氧化铋系层状铁电薄膜记忆材料的晶体结构、极化特点、应用原理以及它与传统PZT类材料相比的优越性。概述了此类薄膜的制备方法，分析了该类薄膜目前尚存在的问题并展望了未来发展的趋势。
The latest development of femelectrics of the layered-perovskite family epitomized bySrBi2Ta2O9 was reviewed. The crystal structure, polar characteristics, applied principles and advantages overtraditional PZT materials were discussed about this kind of nonvolatile femelectric random-access memories(NVFRAM). The preparing technologies as well as the crst and future problems of ferroelectric thinfilms were briefly analzed.
出处
《河北陶瓷》
2000年第2期6-9,共4页
Hebei Ceramics
关键词
铁电体
薄膜
记忆材料
计算机
存储器
ferroelectric, thin films, memory, bismuth oxide, polarization
