摘要
在 CMOS工艺结构中,将位于阱中的 MOS 器件加适当的偏置,可以使其变为体内器件、以横向双极管的模式工作.本文利用 3μm P-well和 2μm N-well两种 CMOS工艺设计了这种横向双极器件,分析讨论了这种器件的工作原理和特点,并给出其典型的直流和交流参数的实验数据.这些分析和实验数据将有助于电路设计者了解和掌握该器件的电流、频率工作范围及特性,以便在CMOS电路中充分发挥其特长.
In CMOS technology,the MOSFET located in a well can become a bulk device and ope-rate in the lateral bipolar mode when suitable bias is applied.Two production CMOS pro-cesses,a 3μm P-well CMOS and a 2μm N-well CMOS, are used to fabricate the CMOS com-patible lateral bipolars.The property of the device is analyzed and discussed.Typical experi-mental data of DC and AC parameters are presented.The analysis and data are very helpfulfor the IC designers who want to know the range of operating current and frequency of thedevice and want to make a full use of the advantage of the device for improving their CMOSintegrated circuits.
