摘要
我们观察到了Si单晶对调 Q Nd:YAG的 1.06 μm脉冲激光的光学限制效应,并对其机理进行了分析.
We observed the optical limiting effect in Silicon when 1.06μm pulse laser beam produ-ced by Q-switched Nd:YAG Laser passed through it.Mechanism of this phenomena is analy-sed.
关键词
硅单晶
脉冲激光
光学效应
Instruments
Protection
Semiconducting Silicon
Semiconductor Materials
Research
