摘要
MOVPE生长不掺杂GaAs薄层的线偏振光吸收系数电流感生变化△α的实验结果表明,△α随光波长λ呈脉冲线型非线性变化;注人电流增加,△α明显增大,且△α(λ)谱极大值位置向长波端有一个小移动以至△α(λ)谱线半值全宽也有增宽.λ=900nm处,△α值基本上随电流线性增加.
The experimental results of the current-induced absorption coefficient changes in undo-ped thin-layered GaAs grown by MOVPE to linearly polarized light is given. The relationbetween the current-induced changes of absorption coefficient △α and wavelength λ, is a non-linear variation with a pulse-shaped envelope. As increasing current, △α is remarkably in-creased and maximum position in △α(λ) spectrum is a little shifted to long-wavelength edge,and the full width of half maximum in △α(λ) spectrum is also broadened by injected cur-rent.△α is approximately of a linear variation as increasing current at 900 nm.
