摘要
本文利用俄歇电子谱(AES)、X射线衍射(XRD)和电学测量等方法研究了原位掺杂多晶硅/CoSi_2/Si_(衬底)多层结构在700—900℃的温度范围内在惰性气体和真空中进行热处理的稳定性.结果表明,当退火温度低于 850℃,这种结构有良好的热稳定性.当温度高于 850℃,多晶硅与硅化物间将发生互扩散和界面反应.随着退火温度升高,在惰性气体的气氛中,CoSi_2迁移到表面层,而硅外延生长在硅衬底上,形成 CoSi_2/Si 双层结构;在真空中热处理仍可保持 poly-Si/CoSi_2/Si 三层结构.
Stability of the phosphorous or boron (in situ)-doped polycrystalline silicon/CoSi_2/Sisandwich structure at temperatures ranging from 700℃ to 900℃ in Ar and vacuum am-bient has been invenstigated using AES, XRD and electrical measurements. The results showthat when temperatures are Lower than 850℃, the structure has excellent thermal stability.When temperatures are higher than 850℃, interdiffusion at the polysilicon/silicide interfaceis observed, and resulting a structure of CoSi_2/Si in Ar ambient and polysilicon/CoSi_2/Si invacuum.
