摘要
本文采用玻尔兹曼-曼特诺变换方法,得到了一个新的描述硅快速热氧化生长动力学的解析模型.在靠近硅与二氧化硅界面处产生一个富氧区.在非稳态情况下,直接从氧扩散方程得到了增强因子.在温度为1050—1200℃范围内,本解析模型在计算快速热氧化(RTO)生长的氧化层厚度方面与测量结果基本一致.
A new analytical model for describing the growth kinetics of Rapid Thermal Oxidationof Si with the use of Boltzmann-Mamtano transformation is reported.The creation of an oxy-genrich region near the Si-SiO_2 interface is assumed.The enhancement factor is derived direc-tly from the oxygen diffusion equation in the case of non-steady state. The measured results are in good agreement with the oxide thickness predicted by the an-alytical model in the temperature range from 1050℃ to 1 200℃.
关键词
硅
氧化
动力学
热处理
模型
Kinetics
Analysis
Semiconductor Device Manufacture
Research
