摘要
本文应用热激电流(TSC)方法研究了MNOS结构中界面陷阱随能量和空间分布的情况.在Wei-Simmons模型的基础上,建立了MNOS结构TSC 谱存储峰的分析理论.该理论满意地描述了实验结果,并得出所研制的MNOS结构存储陷阱分布的主要参数N_o、E_t和d分别为1.47×10^(10)cm^(-3)、1.09eV和50A,模型参数τ_o及v_o和前人的理论结果一致。本文同时确定了该MNOS结构中、超薄SiO_2膜Si/SiO_2界面上态密度的D_(it)(E)分布,其结果和MOS结构中厚SiO_2膜的界面情况类似.
A new analytical theory of TSC spectrum based on the Wei-Simmons model has been de-rived in MNOS structures.The theoretical results are in good agreement with the experimentaldata, and the main parameter values of memory trap in our fabricated sample, trap density,trap energy level and trap distribution depth into the nitride film, have been found to be1.47×10^(18)cm^(-3),1.09 eV and 50 A, respectively. The fitted parameters of this model, τ_0 and V_0,agree satisfactorily with other theoretical results.Furthermore, we have also determined statedensity distribution of the Si/SiO_2 interface in MNOS structures, and the results agree withthe case in MOS structures.
基金
国家自然科学基金
关键词
化合物半导体
MNOS结构
热激电流谱
Data Storage, Digital
Nonvolatile
Semiconductor Materials
Spectrum Analysis
