SiC半导体探测器性能测量研究

Properties Measurement of Silicon Carbide Detector

采用241Am-α粒子源测量了研制的SiC半导体探测器的上升时间、脉冲幅度以及能量分辨率等性能,计算了空气和肖特基Ni/Au层厚度对α粒子的能量损失,测量了抽真空和加不同偏压等条件对SiC探测器性能的影响。计算表明:0.8 cm的空气层对α粒子有20%的能量损失,3.5μm的肖特基Au层对α粒子有39%的能量损失。在1 700 Pa的低真空环境中、350 V偏压下SiC探测器达到最佳工作条件,此时探测器的上升时间为76.9 ns,输出幅度为22.8 mV,能量分辨率为13.7%。采用更薄肖特基金属镀层(≤0.1μm)可制备出更高能量分辨率的SiC探测器。

Risetime, pulse height and energy resolution Properties of silicon carbide detector are measured using the UlAm - alpha- particle. Calculations of the energy straggling in the atmosphere between SiC detector and ut Am - alpha - particle, and entrance Au window, were carried out with the Bragg expressions. Energy strag- gling in the 0.8 centimeter atmosphere layer is 20%, and in the 3.5 μm entrance Au window is 39%. Rise- time of 76.9 ns, pulse height of 22.8 mV and energy resolution of 13.7% are observed with the SiC detector, which is in the optimization condition with vacuum of 1700 Pa and reverse bias of 350 volt. Fabrication of SiC detectors with schottky contact thicknesses less than 0.1 μm appears to be possible, and with such detectors, the possibility that the energy resolution that can be achieved with SiC may surpass that of silicon can not be ex- cluded.