SiC新一代电力电子器件的进展

Progress of the New Generation SiC Power Electronic Devices

以SiC和GaN为代表的宽禁带半导体材料的突破给发展新一代电力电子带来希望。SiC材料具有比Si材料更高的击穿场强、更高的载流子饱和速度和更高的热导率,使SiC电力电子器件比Si的同类器件具有关断电压高、导通电阻小、开关频率高、效率高和高温性能好的特点。SiC电力电子器件将成为兆瓦电子学和绿色能源发展的重要基础之一。综述了SiC新一代电力电子器件的发展历程、现状、关键技术突破和应用研究。所评估的器件包含SiC SBD、SiC pin二极管、SiC JBS二极管、SiC MOFET、SiC IGBT、SiC GTO晶闸管、SiC JFET和SiC BJT。器件的评估重点是外延材料的结构、器件结构优化、器件性能、可靠性和应用特点。最后总结了新世纪以来SiC新一代电力电子器件的技术进步的亮点并展望了其技术未来发展的趋势。

The breakthrough of wide bandgap semiconductor material by SiC and GaN as a representative bring about hope for the development of a new generation of power electronic. The SiC materials is better than Si material with higher breakdown field intensity, higher carrier saturation speed and higher thermal conductivity, it make SiC power electronic devices than the same kind of Si device with higher blocking voltage, smaller specific on-resistance, higher switch frequency, higher efficiency and better high temperature performance. SiC power electronic devices will become the one of the important foundation of the development in MW electronics and green energy. The development course, status, key technology breakthroughs and applied research of the new generation SiC electronic devices are reviewed. The device types reviewed include SiC SBD, SiC pin diode, SiC JBS diode, SiC MOFET, SiC IGBT, SiC GTO thyristor, SiC JFET and SiC BJT. The point of assessment is epitaxial material structure, device structure optimization, device performance, reliability and application characteristics of the device. Finally, the technology progress highlights of SiC a new generation of power electronic devices in the new century are summarized and the future trend of the technology is prospected.