亮暗衬线法校正邻近效应及其实验研究

Bright and dark figure method for OPC and its experimental research

光学光刻中的邻近效应校正是实现亚微米光刻的必要手段。作者基于波前加工的思想 ,提出亚分辨亮暗衬线结合辅助线条实现邻近效应校正的方法 ,分析了其校正机理 ,采用这种新方法 ,在可加工 0 .7μm光刻图形的I线投影曝光装置上加工出了 0 .5μm的光刻图形 ,取得了较好的实验结果 ,并与其它邻近效应的校正方法进行了比较。

Optical proximity correction is an effective and essential tool in submicron photolithography. In this paper,based on the theor y of wavefront engineering,we presente a new correction method to reduce proxim ity effects by adding bright and dark figure or feature on the mask and analyzin g the mechanism for correcting proximity effect. Some 0.5μm features have been got by using the new correction method in a I line projection system which can o nly fabricate 0.7μm figure without OPC. The satisfied experiment results are ob tained and the advantages or disadvantages are discussed by using different OPC method.