摘要
有关氦与辐照缺陷的相互作用已有不少系统性的工作,但对氢与辐照缺陷的相互作用的研究不多。特别是氢的同位素氘或者氚存在于核聚变反应堆中,关于氢的同位素效应对辐照损伤的研究工作很少。采用离子加速器在室温下对纯铁注入氘离子,经500℃时效1h后,研究了电子辐照下位错环的演变过程并讨论了同位素效应对位错环偏压的影响。实验表明,随辐照剂量的增加,空位型位错环的尺寸逐渐减小直至消失。由于注氘纯铁中的位错偏压小,其空位型位错环缩小的速率比注氢纯铁中空位型位错环小,由此可以推断注氘纯铁比注氢纯铁抗辐照损伤性能好。
There are systematic works on the interaction between helium and irradiation defects, while not so many on hydrogen. Especially, the isotopic atoms of hydrogen, deuterium or tritium would exist in the envi- ronment of fusion reaction. However, few works were reported about the isotope effect of hydrogen on irradia- tion damage. This work used ion accelerator to implant ions of deuterium into the samples of pure iron at R. T. , followed by annealing at high temperature to make the defects develop into large dislocation loops. The electron irradiation by high voltage electron microscope was carried out to check the nature of loops. The iso- topic effect on the bias of dislocation loops was discussed.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2013年第2期262-265,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50771017)
国家重点基础研究发展计划(973计划)资助项目(2008CB717802
2009GB109004)
关键词
氘离子注入
辐照损伤
位错环
偏压
deuterium ions implantation
irradiation damage
dislocation loop
bias strength