激光熔蚀反应淀积AlN薄膜残余应力及热稳定性的研究

Residual Stress and Thermal Stability of AlN Thin Films Deposited by Reactive Laser Ablation

激光熔蚀反应淀积于 Si(10 0 ) ,Si(111)基底上的 Al N薄膜是高质量高取向性的 Al N多晶膜 ,薄膜与基底的取向关系为 Al N(10 0 )∥ Si(10 0 ) ,Al N(110 )∥ Si(111)。薄膜具有较低的残余应力和较好的热稳定性。实验结果表明 ,当氮气压强和放电电压分别为 10 0× 133.33Pa和 6 50 V时 ,薄膜的残余应力低于 3GPa。此样品在纯氧环境 50 0℃时 ,经过 3h的退火 ,红外吸收谱检测未发现有Al2 O3 特征峰出现。对 Al N/Cu双层膜的研究表明所制备的 Al N薄膜在金属薄膜的防护上也有潜在的应用价值。

The high quality polycrystalline AlN thin films have been deposited on the (100) and (111) Si substrates, the orientation relation between films and substrates was AlN(100)∥Si(100), AlN(110)∥Si(111) respectively. The AlN films have low residual stress and well thermal stability. The experimental result shows that the residual stress of AlN films prepared with 100×133 33 Pa nitrogen pressure and 650 V discharge voltage was lower than 3 GPa. The infrared spectrum of the AlN films after annealed for 3 hours at 500℃ in pure oxygen atmosphere displayed the nonexistence of Al 2O 3. And the investigation of AlN/Cu dual layer film showed the positive effect of AlN thin films on the protecting of metallic films.