GaAs和InP基HFET工艺中的选择腐蚀技术

The Selective Etching Technology in GaAs-Based and InP-Based HFET

综合了 Ga As和 In P基 HFET工艺中的选择腐蚀技术的有关报道 ,重点介绍了应用 ICP设备和气体组合 BCl3+ SF6 进行异质结材料组合的干法腐蚀实验 ,腐蚀后在显微镜和扫描电镜下观察窗口平整干净、作迁移率测试等与湿法腐蚀的片子相比较没有看出差别 ,适宜用于器件工艺。

The selective etching technology of GaAs based and InP based HFET fabrication is reviewed in this paper.It is especially emphasized to investigate dry etching process by using BCl 3+SF 6 gas mixture in ICP facility.It has been proved that the dry etching windows are regular,cleanly by observing in microscope and SEM,and the electronic mobility of etched wafer is no difference as compared with wafer after wet et ching.Dry etching of using BCl 3+SF 6 gas mixture in ICP facility is a good choice for GaAs based and InP based HFET technology.